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Mass spectrometer detachment Product List

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[Analysis Case] Thermal Desorption Gas Analysis of SiN Film by TDS

[Analysis Case] Thermal Desorption Gas Analysis of SiN Film by TDS

It is possible to evaluate the surface-adsorbed gas on the thin film and the desorbed gas from within the film.

The TDS analysis results regarding the SiN film on the Si substrate are presented. In the low-temperature range up to around 100°C, there is little desorption, indicating that there were few adsorbed components on the surface of the sample. On the other hand, as the temperature of the sample increases, it can be observed that m/z 2 (H2), m/z 18 (H2O), and m/z 27 (C2H3: organic fragment components) are being desorbed. TDS analysis conducted under high vacuum (1E-7 Pa) is effective for evaluating the adsorbed gas components on the film surface and trace gas components within the film.

  • Contract Analysis
  • Mass spectrometer detachment

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[Analysis Case] Estimation of Detachment Components by TDS

[Analysis Case] Estimation of Detachment Components by TDS

We will compare the outgassing patterns of multiple masses.

The analysis results of TDS may show multiple components detected for a single mass-to-charge ratio (m/z). Even in such cases, it is possible to estimate the components desorbed by heating by measuring multiple masses and comparing the desorption patterns. Using the TDS analysis results of W films on Si substrates as an example, I will explain the estimation methods for water and ammonia (m/z=17), as well as organic substances and argon (m/z=40).

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  • Mass spectrometer detachment

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[Analysis Case] Degassing Evaluation of Plating Samples

[Analysis Case] Degassing Evaluation of Plating Samples

Thermal Desorption Gas Analysis of Ni/Au Plating (TDS)

If the plating film contains gas, it may cause defects such as peeling, blistering, and bubbles within the film. To investigate the gas contained in the plating film, TDS, which can measure the gas released by heating the sample in a high vacuum, is effective. The results of TDS analysis on a sample with Ni/Au plating on SUS material are presented. The release of H2, HCN, H2S, and HCl from the plating film was confirmed. Additionally, quantitative values were calculated.

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  • Mass spectrometer detachment

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[Analysis Case] De-gassing Analysis of Hydrogen Terminal Wafers

[Analysis Case] De-gassing Analysis of Hydrogen Terminal Wafers

The hydrogen in the outermost single atomic layer can be evaluated using TDS.

TDS is a method that heats the sample, ionizes the released gases, and performs mass analysis. It can analyze the mass-to-charge ratio (m/z) from 2 to 199 in high vacuum (1E-7 Pa). In this case, we will introduce an example of TDS analysis conducted on a Si chip treated with hydrogen termination. The TDS was able to capture the desorption of hydrogen from the hydrogen-terminated surface.

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  • Mass spectrometer detachment

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[Analysis Case] Evaluation of the Thermal Treatment Temperature Dependence of Organic Films by TDS

[Analysis Case] Evaluation of the Thermal Treatment Temperature Dependence of Organic Films by TDS

You can confirm the changes in degassing due to differences in the baking temperature of the sample using TDS.

TDS can evaluate the temperature dependence of the desorption of inorganic and organic gases that are released with increasing temperature. Therefore, it is effective for assessing the degassing of samples based on the baking temperature. The results of TDS analysis after baking the resist film at 50°C and 200°C are shown. It was confirmed that the degassing peaks detected up to 200°C after "baking at 50°C" were not detected after "baking at 200°C."

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  • Mass spectrometer detachment

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